金刚线切割多晶硅片表面酸制绒效果研究

Study on Acid Texturization of Diamond Wire Sawn Multicrystalline Silicon

为了探索金刚线切割多晶硅片的表面制绒新技术,采用常规酸制绒、添加剂酸制绒和酸蒸气制绒三种方法对金刚线切割多晶硅片表面进行制绒处理,并用扫描电镜和光谱仪分析了三种制绒方法处理后多晶硅片的表面形貌和反射率比变化。结果表明,酸蒸气制绒能够更加有效地去除线锯切割产生的平行纹,降低表面反射率。通过调节蒸气源蒸发的温度,可以有效改善多晶硅的表面形貌,大幅降低入射光在多晶硅表面的反射率,300～1 100nm波长范围内多晶硅样品的最低平均反射率达11.6%,有望用于制作高效多晶硅太阳电池。

In order to explore new technologies for texturization of diamond wire sawn multicrystalline silicon(mc-Si)wafers,three methods including traditional acid texturing,additive acid texturing and acid vapor texturing were adopted to make acid texturization on the surface of the diamond wire sawn mc-Si wafers.Scanning electron microscope(SEM)and spectrograph were used to analyze the surface morphology and reflectivity of the silion wafers.The results show that acid vapor texturing method can remove the stubborn saw marks of mc-Si wafers more effectively and reduce the surface reflectivity.By adjusting the evaporation temperature of acid vapor solution,the surface morphology of mc-Si wafers was improved,and the minimum average reflectance at 300~1 100 nm decreases to 11.6%.