用于相控阵雷达的X波段SiGe低噪声放大器

X-Band SiGe Low Noise Amplifier for Phased Array Radar

基于SiGe BiCMOS工艺,设计实现了一款用于有源相控阵雷达的X波段低噪声放大器(LNA)。采用Cascode结构,有效扩展了放大器带宽,提高了放大器增益。使用噪声匹配与功率匹配一体化设计方法,实现了噪声与功率的同时匹配。同时加入了温度补偿偏置电路,降低了LNA高低温增益变化。采用0.18μm SiGe BiCMOS工艺进行设计仿真和流片,测试结果表明,该LNA最高增益为17 dB,全频带内高低温增益变化0.5 dB,噪声系数为1.8 dB@10 GHz;LNA使用1.8 V供电,工作电流为14 mA。芯片核心面积为0.50 mm×0.58 mm。

An X-band SiGe low noise amplifier(LNA)for phased array radars was designed based on SiGe BiCMOS process. Using Cascode structure, the bandwidth of the LNA was expanded and the gain was improved. The integrated design method of noise matching and power matching was used to achieve noise and power matching simultaneously. The temperature compensation bias circuits were adopted to reduce gain variation with temperature of the LNA. The 0.18 μm SiGe BiCMOS process was used for design simulation and tape out. The measurement results show that the maximum gain of LNA is 17 dB, the gain variation with temperature is 0.5 dB within the whole bandwidth, the noise factor is 1.8 dB at 10 GHz. The LNA is supplied by 1.8 V, and the operating current is 14 mA. The core area of the chip is 0.50 mm×0.58 mm.