金刚石基GaN HEMT技术发展现状和趋势

Development Status and Trends of GaN HEMTs on Diamond Substrate Technology

采用金刚石衬底可显著提升GaN微波功率器件的散热能力,从而制作尺寸更小、功率更高的金刚石基GaN高电子迁移率晶体管(HEMT)器件。介绍了金刚石基GaN HEMT技术优势。综述了金刚石基GaN HEMT的金刚石衬底生长、金刚石与GaN HEMT层结合、金刚石/GaN界面优化等制造技术的研发现状,并概述了金刚石基GaN微波功率器件的最新研究进展。最后分析了金刚石基GaN HEMT制造技术面临的挑战和未来的发展趋势,表明制作低成本大尺寸金刚石衬底材料、提升GaN/金刚石界面热阻以及大幅提升金刚石基GaN器件的性能并在射频功率器件领域实现商用将是未来发展的重点。

The use of a diamond substrate material can significantly improve the heat dissipation capability of GaN-based microwave power devices,thereby GaN high electron mobility transistors(HEMTs)on diamond substrate with smaller scale and higher power can be manufactured.The advantages of GaN HEMTs on diamond substrate technology are introduced.The development status of diamond substrate growth,diamond and GaN HEMT layer bonding and diamond/GaN interface optimization of GaN HEMTs on diamond substrate is reviewed.The latest research progress of GaN-on-diamond microwave power devices is summarized.Finally,the challenges and future development trends of GaN HEMTs on diamond substrate manufacturing technology are analyzed,which shows that making low-cost and large-size diamond substrate materials,improving GaN/diamond interface thermal resistance and greatly improving the performance of diamond-based GaN devices and then commercially available in the field of RF power devices will be the focus of future development.