富铟磷化铟晶体中铟夹杂物基体特征分析

Matrix Characteristics Analysis of Indium Inclusions in In-Rich Indium Phosphide Crystal

对富铟磷化铟(InP)晶体中铟夹杂物的基体特征进行了分析和表征。在富铟熔体中制备了InP单晶,利用金相显微镜及红外透射显微镜研究InP晶体中的铟夹杂物形态及其基体周围的影响区的形成。研究发现在铟夹杂物周围的InP基体上存在一些轮廓线。基于铟夹杂物的形成过程和其对周围InP基体的影响,分析了铟夹杂物及其周围轮廓线的形成机理。通过位错腐蚀发现,铟夹杂物周围的InP基体上存在高的位错区,沿着晶体生长方向的位错密度偏高。通过力学分析发现,这种位错分布不均匀主要是由于富铟熔体结晶过程中沿着温度梯度方向的体积膨胀较大所致。

Matrix characteristics of indium inclusions in In-rich indium phosphide(InP)crystals were analyzed and characterized.InP single crystals were prepared in indium-rich melt,then the morphology of indium inclusions in InP crystals and the formation of its affected zone around the matrix were studied by metallurgical microscope and infrared transmission microscope.It is found that contours are formed in the InP matrix around indium inclusions.Based on the crystallization process of indium inclusions and its influence on the InP matrix around,the formation mechanism of indium inclusions and the contours around it was analyzed.By dislocation corrosion,it is found that there is a high dislocation area on the InP matrix around the indium inclusions,and the dislocation density along the direction of crystal growth is higher.Through mechanical analysis,it is found that the uneven dislocation distribution is mainly due to the larger volume expansion along the temperature gradient during the crystallization of indium-rich melt.