基于电荷泵技术的三维器件的界面电荷特性研究

Study on Interface Charge Characteristics of Three-Dimensional Devices Based on Charge Pumping Technology

利用传统电荷泵技术对三维立体器件界面缺陷特性进行了研究。通过改变测试脉冲上升或下降时间,分析了三维器件界面缺陷能级分布,得出缺陷能级呈现类似'U'型分布。通过在源、漏区施加不同电压,对缺陷沿沟道水平分布进行研究,得到界面缺陷在靠近源、漏区的量最大而在远离源、漏区的位置无规则分布。通过改变脉冲保持时间,对缺陷沿高介电常数叠栅垂直分布进行研究,可以明显区分开缺陷在中间介质层和高介电常数层的缺陷量。另外,利用电荷泵技术验证了三维器件负偏压温度不稳定性(NBTI)与界面缺陷的关系。

The interface defects characteristics of three-dimensional(3 D)devices were studied by traditional charge pumping technology.The defect level distributions of three-dimensional devices were analyzed by changing the rise and fall time of the pulse.And it is found that the defect level exhibits a similar U-type distribution.Then the horizontal distributions along the channel of defects were studied by changing voltages at source and drain regions.It is concluded that defects have the largest amount close to the source or drain regions and irregular distribution at locations away from the regions.The study of the vertical distributions of defects was studied along the high dielectric constant stacked gate by changing the hold time of the pulse to clearly distinguish the defect amount in the middle dielectric layer and the high dielectric constant layer.In addition,the relationships between negative bias temperature instability(NBTI)of 3 D devices and interface defects were also evaluated by charge pumping technology.