F频段三倍频放大多功能芯片设计与实现

Design and Implementation of F-Band Triple Frequency Amplification Multi-Function Chip

基于InP高电子迁移率晶体管(HEMT)工艺,研制了一款F频段三倍频放大多功能芯片。将三倍频器与驱动放大器级联,实现了F频段三倍频放大的单片集成。前端三倍频器电路由输入匹配电路、输入低通滤波电路、并联二极管对、输出高通滤波电路与输出匹配电路构成,通过反向并联二极管对实现三次倍频,在优化匹配前后级电路的同时,通过输入低通滤波器与输出高通滤波器滤除三次谐波外的基波与各次谐波。后端所级联的驱动放大器采用四级管芯级联的双电源拓扑结构来提高增益及输出功率。测试结果表明,输入频率为30~47 GHz、输入功率为15 dBm时,输出频率为90~141 GHz,输出功率大于6 dBm,输入回波损耗小于-13 dB,输出回波损耗小于-6 dB。芯片尺寸为4.40 mm×1.60 mm×0.07 mm。

An F-band triple frequency amplification multi-function chip was fabricated based on InP high electron mobility transistor(HEMT)process.The tripler was cascaded with the driver amplifier to achieve monolithic integrated circuit of F-band triple frequency amplification.The topology of the tripler circuits includes an input matching circuit,an input low pass filter circuit,a reverse parallel diode pair,an output high pass filter circuit and an output matching circuit.Triple frequency was realized by reverse parallel diode pair.While optimizing the matching front and rear stage circuits,the fundamental wave and each harmonic other than the third harmonic were filtered by the input low pass filter and the output high pass filter.The amplifier cascaded at the back end used a four-stage cascading dual-supply topology to increase gain and output power.The test results show that when the input frequency is in the range of 30-47 GHz and the input power is 15 dBm,the output frequency is 90-141 GHz,the output power is greater than 6 dBm,the input return loss is less than-13 dB,and the output return loss is less than-6 dB.The chip size is 4.40 mm×1.60 mm×0.07 mm.