液封直拉富铟InP中铟夹杂的纵向和横向分布

Vertical and Transverse Distributions of Indium Inclusions in Indium-Rich of LEC InP

采用光学显微镜与红外透射显微镜相结合的方法,研究了磷化铟(InP)晶片中铟夹杂的形貌,通过比较含有铟夹杂的晶体与晶片,总结了铟夹杂在富铟磷化铟中的纵向与横向分布行为,并分析了熔体组分配比度、固液界面形貌以及温度梯度对铟夹杂分布行为的影响。在含有铟夹杂的单晶片中发现铟夹杂的一种特殊环形分布行为,对比和它相邻的晶片,发现这种环形分布呈现出沿生长方向直径逐渐变小的趋势,初步分析与固液界面呈微凸的形貌有关。在这种特殊分布中,发现部分铟夹杂呈四方对称分布。结合磷化铟的晶体结构,分析这种对称分布与固液界面处的{111}晶面有关。

The morphologies of indium inclusions in InP wafers were studied by the optical microscopy and infrared transmission microscopy.The vertical and transverse distributions of indium inclusions in indium-rich InP were summarized by comparing different crystals and wafers containing indium inclusions.The effects of melt stoichiometric ratio,solid-liquid interface morphology and temperature gradient on the distribution of indium inclusions were analyzed.A special annular distribution of indium inclusions was found in a single wafer containing indium inclusions.Compared with the adjacent wafers,it is found that the annular distribution tends to decrease in diameter along the growth direction.Preliminary analysis shows that this distribution is related with the slightly convex shape of the solid-liquid interface.In this special distribution,it is found that some indium inclusions are tetragonal symmetrical distribution.Combined with the InP crystal structure,it is presented that the symmetrical distribution is related with the{111}crystal plane at the solid-liquid interface.