摘要
文中叙述了 6 Gc、12Gc GaAs FET所需双层外延材料的制备工艺,获得了 3—5μm厚高阻缓冲层及 0.2—0.3 μm厚,浓度 1.0—1.5 ×10~。(17)/cm^3,迁移率 4500-4870 cm^2/V·scc的有源层.列出了有无缓冲层的电学数据.材料用于制作FET,在6G_c下噪声系数2.8dB,增益7-9 dB,在 12GC下噪声 3.5 dB增益 4.0 dB. 文中还提出了采用含有AsOCl的AsCl_3来制备高阻缓冲层,文末进行了简短的讨论.
The process of the preparation of the double-layered epitaxial material used for6 Gc and 12 Gc FET is described.In our present work high resistivity buffer layersof 3-5 μm thickness have been obtained as well as active layers which have athickness of 0.2-0.30μm, a concentration of 1-1.5 10(17)/cm^3 and a mobility of 4500-4870 cm^2/V-s.The electrical data of the layers with and without buffer layers arelisted.The FET from such material has a noise factor of 2.8 dB and 3.5dB,and again of 7-9dB and 4.0dB at 6 Gc and 12Gc respectively. Another method for the preparation of high resistivity buffer layers is alsopresented with AsCl_3 containing AsOCl and a short discussion given.
