摘要
用液相外延方法生长了InGaAsP/InP四层双异质结,采用了镀金石英玻璃炉和水平滑动式石墨舟.研究了外延生长界面平直晶体质量好的InGaAsP/InP和InP/InGaAsP异质结的工艺细节.测量了异质结晶格失配度,确定了异质结匹配生长条件。研究了在InP液相外延中锌和碲的掺杂规律,分析了掺锌工艺对p-n结的位置、结的注入效率和其它结特性的影响.制作了质子轰击条形InGaAsP/InP DH激光器.在室温(300K)连续激射波长为1.30-1.33μm.室温宽接触激光器的阈电流密度为2000A/cm^2,规一化阈电流密度为5kA/cm^2·μ.测量了阈电流随温度的变化,在80—285K范围内特征温度T_o=79-108K,室温附近T_o=63-73K.选择两只激光器作了长期工作实验,其中一只寿命为560小时,另一只已经工作2500 小时,现仍在继续工作中.
InGaAsP/InP four layer double heterostrueture wafers have been grown by liquidphase epitaxy.The conditions needed for growing InGaAsP/InP and InP/InGaAsP he-terojunetions with flat interfaces and high crystal quality have been inverstigated.The heterojunction lattice mismatch was measured and LPE conditions for latticematched-heterojunctions established.The influence of various concentrations of Te andZn in the melt on the carrier concentrations ia the LPE layers of InP as well asthe effect of zinc doping conditions on the junction position, injection efficiency ofthe p-n junctions and other junction properties were investigated. Stripe geometryInGaAsP/InP DH lasers were fabricated by the use of proton bombardment.Thewavelength of the lasers operating continuously at room temperature (300K) was1.30-1.33 μm. The room temperature threshold current density of the broad contactlasers was 2000A/cm^2 and the normalized threshold current density 5 kA/cm^2 μ.The temperature dependence of the threshold current between 80-330 K was measuredand the characteristic temperature T_0 found to be 79-108 K in the range of 80-285Kand around room temperature T_0=63-73K. Continuous operation of more than3000 hours has been achieved under atmospheric conditions.
