摘要
本文研究了硼离子注入硅的载流子浓度分布.实验表明,载流子浓度分布可以近似用线性扩散方程的解来描述.因此,通过结深的实验值得到了一套随注入剂量,退火温度和时间变化的扩散系数.用这套扩散系数又可以计算出能量 40-400keV,剂量5×10^(13)-1×10^(15)cm^(-2),退火温度900℃-1100℃,退火时间15分-2 小时这个范围内的载流子浓度分布.
The carrier profiles of boron implanted in silicon are studied.The experiments indicate that the profiles can be described approximately by the solution of linear dif-fusion equation.Based on this, the diffusion coefficient is determined by the experi-mental value of junction depth.The diffusion coefficient varies with the implantationdose,annealing temperature and annealing time.According to the diffusion coefficients,carrier profiles in the following range:energy 40-400 keV,dose 5~×10_(13)-1×10^(15) ions/cm^2,annealing temperature 900℃-1100℃ and annealing time 15 minutes-2 hours,havebeen computed.
