摘要
用Van der Pauw法测量高纯VPE-GaAs和LPE-GaAs样品在20—300K温度范围内的电学性质,分析了它们的电子散射机理.最纯的VPE-GaAs样品峰值迁移率高达3.76×10~5cm^2/V·s,LPE-GaAs样品的峰值迁移率为2.54×10~5Cm^3/V·s.这两个样品的总离化杂质浓度分别为 7.7 × 10^(13)cm^(-3)和 1.55 ×10^(14)cm^(-3).
Electrical properties of high purity VPE-GaAs and LPE-GaAs have been measured by using Van der Pauw method at a temperature range of 20 K to 300 K, their scatteringmechanism has also been analysed.The highest peak mobility obtained in our laboratoryis 3.76×10~5cm^2/V.s for VPE-GaAs and 2.54×10~5 cm^2/V.s for LPE-GaAs respectively.
