摘要
本义介绍了在LPE-GaAs表面出现的弯月线受片子脱离生长液的速度、方向、温度、气氛中的砷分压以及衬底和液槽框底之间的间隙的影响.根据这些现象,提出了形成弯月线的原因——“半周线瞬时局部回溶”的设想.用它能解释有关的实验现象.
The meniscus lines on LPE-GaAs surface are affected by the speed,temperature and direction of the wafer leaving the growth liquid,by the As partial pressure of the gasflow and by the gap between the surface of the epitaxial layer and the frame bottomof the liquid bath.Based on these phenomena,the concept of"semi-circumferential lineinstant local meltingback" is postulated,which can interpret the cause of forming meni-scus lines.
