摘要
用C-V技术测量了铝膜和金球探针作为电极的MOS系统接触电势差,MOS系统的衬底包括(100)和(111)两种取向的n型和P型硅单晶片,SiO_2膜用热氧化工艺生长.测量结果表明,用C-V技术测到的铝-硅和金-硅接触电势差比用光发射方法测到的数据均大了0.35伏左右.作者认为,在研究MOS系统不涉及光的电学现象,需要接触电势差时,最好采用C-V技术测出的数据.
The contact potential difference of the MOS-system with aluminium field·plates and gold probe electrode is measured by the MOS-capacitance-voltage technique for(100) and (111) oriented n-type as well as p-type silicon slices with thermal SiO_2.Itcan be seen that the contact potential differences measured in this work are about 0.35 Vmore positive than the values measured by the photoemission technique.It is suggestedthat the value measured by the MOS-capacitance-voltage technique should be used whenthe electrical phenomana without light in MOS-system are investigated.
