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Effect of inhomogeneous broadening on threshold current of GaN-based green laser diodes 被引量:3

Effect of inhomogeneous broadening on threshold current of GaN-based green laser diodes
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摘要 The inhomogeneous broadening parameter and the internal loss of green LDs are determined by experiments and theoretical fitting. It is found that the inhomogeneous broadening plays an important role on the threshold current density of green LDs. The green LD with large inhomogeneous broadening even cannot lase. Therefore, reducing inhomogeneous broadening is a key issue to improve the performance of green LDs. The inhomogeneous broadening parameter and the internal loss of green LDs are determined by experiments and theoretical fitting. It is found that the inhomogeneous broadening plays an important role on the threshold current density of green LDs. The green LD with large inhomogeneous broadening even cannot lase. Therefore, reducing inhomogeneous broadening is a key issue to improve the performance of green LDs.
出处 《Journal of Semiconductors》 EI CAS CSCD 2019年第5期67-70,共4页 半导体学报(英文版)
基金 supported by the National Key Research and Development Program of China(Grant Nos.2017YFB0405000,2016YFB0401803) the National Natural Science Foundation of China(Grant Nos.61834008,61574160,and 61704184) support of the Chinese Academy of Science Visiting Professorship for Senior International Scientists (Grant No.2013T2J0048)
关键词 GaN green laser DIODE INHOMOGENEOUS BROADENING threshold current density GaN green laser diode inhomogeneous broadening threshold current density
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