粉末靶磁控溅射制备AZO/Ag/AZO透明导电薄膜的特性

Properties of the AZO / Ag / AZO Transparent Conductive Films Prepared by Magnetron Sputtering Using Powder Targets

室温下采用射频磁控溅射粉末靶,在玻璃基底上制备了掺铝氧化锌/银/掺铝氧化锌(AZO/Ag/AZO)三层透明导电薄膜。通过优化中间银层厚度,优化了三层透明导电薄膜的光电性能。采用原子力显微镜和X射线衍射仪分别对薄膜的形貌和结构进行检测分析;采用紫外可见分光光度计和霍尔效应仪分别对薄膜的光电性能进行检测分析。结果表明,所制备的三层膜表面平整,颗粒大小错落均称;三层膜呈现多晶结构,AZO层薄膜具有(002)择优取向的六方纤锌矿结构,Ag层薄膜具有(111)择优取向的立方结构;当三层薄膜为AZO(20 nm)/Ag(12 nm)/AZO(20 nm)时,在550 nm处的透光率为88%,方块电阻为4.3Ω/□,电阻率为2.2×10^(-5)Ω·cm,载流子浓度为2.8×1022/cm^3,迁移率为10 cm^2/(V·s),品质因子为3.5×10-2Ω^(-1)。

The tri-layer transparent conductive films composed of aluminum doped zinc oxide（ AZO） /silver（ Ag） /aluminum doped zinc oxide（ AZO） films were prepared by RF magnetron sputtering using the powder targets at room temperature. The optical and electrical properties of the tri-layer films were optimized by optimizing the middle Ag layer thickness. The morphology and crystallinity,as well as the optical and electrical properties of the as-deposited films were examined by using a range of techniques,including atomic force microscopy,X-ray diffraction（ XRD）,UV-visible spectrophotometer and the Hall-effect measurement. The results show that the morphology of the films exhibite smooth surface,uniform grain size and defect-free structure. The XRD patterns indicate the existence of the polycrystalline structure in the tri-layer films. The each AZO films is（ 002） preferred orientation hexagonal wurtzite structure,the Ag films is（ 111） preferred orientation cubic structure. When the thicknesses of the films are AZO（ 20 nm） / Ag（ 12 nm） / AZO（ 20 nm）,the transmittance of the tri-layer films at 550 nm is 88%,and the sheet resistance,resistivity,carrier concentration,mobility and figure merit of the multilayer film are 4. 3 Ω / □,2. 2 × 10- 5Ω·cm,2. 8 × 1022/ cm3,10 cm2/（ V·s）and 3. 5 × 10- 2Ω（- 1,respectively.