大直径重掺硼硅单晶生长工艺研究

Research of the Process for Heavily Boron-doped Single Crystal Growth

在CG6000型单晶炉上,开展了硼掺杂浓度8×1019cm-3以上的150 mm(6英寸)硅单晶生长试验。通过对热场和生长工艺进行优化,抑制了重掺硼硅单晶拉制过程中的严重组分过冷,成功拉制出了电阻率1.5×10-3Ω·cm以下的无位错重掺硼硅单晶,并对单晶拉制过程中的一些工艺参数设定进行了分析和探讨,提高了该类硅单晶生长的效率和成品率。

P type monocrystal with boron concentration above of 8×10^19cm^-3 has been growthed with CG6000 CZ furnace. The heavily component melt cooling has been restrained through the modification of hotzone and the optimizing of growth process. We finally got the dislocation-free heavily doped boron crystal with the resistivity below 1.5×10^-3Ω·cm, then reaserch and analyse the procedure of the growth. With all the experiments, we enhance the efficiency and yield of the heavily doped boron crystal.