锗抛光片清洗工艺研究

Research on Cleaning Processing of Germanium Polished Wafers

采用紫外线/臭氧技术氧化锗抛光片表面,取代传统的H2O2氧化工艺,之后使用盐酸稀溶液清洗。研究发现当采用波长为253.7 nm和184.9 nm的紫外线光源与臭氧同时作用,并在尽可能靠近锗抛光片表面时,经过30 s的反应时间即可实现对锗抛光片的最佳氧化效果。利用雾值检测对锗抛光片表面质量进行评价,当锗抛光片经过盐酸:H2O=1:50的溶液处理60 s后,可有效地去除抛光片表面的锗氧化物。

In this paper, the UV/O3 cleaning technology was used to oxidate the surface of germanium polished wafer instead of the traditional H2O2, then use the HCl/H2Ot to clean the wafer. The UV light with wavelength of 253.7 nm and 184.9 nm and 03 were used simultaneously in UV/O3 cleaning process. The surface of germanium polished wafers were oxidated after 30 s. Haze analysis was adopted to evaluate the germanium surface. It was found that the HCl/H2O volume ratio of 1：50 has a good impact on germanium wafer cleaning, which can remove the germanium oxide, effectively.