深亚微米SRAM质子单粒子翻转实验研究

Proton Induced Single Event Upset in Submicron and Deep-submicron SRAMs

宇航半导体器件运行在一个复杂的空间辐射环境中,质子是空间辐射环境中粒子的重要组成部分,因而质子在半导体器件中导致的辐射效应一直受到国内外的关注。利用兰州重离子加速器(Heavy Ion Research Facility In Lanzhou)加速出的H2分子打靶产生能量为10 Me V的质子,研究了特征尺寸为0.5/0.35/0.15μm体硅和绝缘体上硅(SOI)工艺静态随机存储器(SRAM)的质子单粒子翻转敏感性,这也是首次在该装置上开展的质子单粒子翻转实验研究。实验结果表明特征尺寸为亚微米的SOI工艺SRAM器件对质子单粒子翻转不敏感,但随着器件特征尺寸的减小和工作电压的降低,SOI工艺SRAM器件对质子单粒子翻转越来越敏感;特征尺寸为深亚微米的体硅工艺SRAM器件单粒子翻转截面随入射质子能量变化明显,存在发生翻转的质子能量阈值,CR`EME-MC模拟结果表明质子在深亚微米的体硅工艺SRAM器件中通过质子核反应导致单粒子翻转。

Microelectronic devices are used in a harsh radiation environment for space missions. Among all the reliability issues concerned, proton induced single event upset（SEU） is becoming more and more noticeable for semiconductor components exposed on space. In this work, an experimental research of SEU induced by 10 Me V proton for static random access memory（SRAM） of 0.5, 0.35 and 0.15 μm feature size is carried out on Heavy Ion Research Facility in Lanzhou for the first time. The experimental results show that proton induced SEUs in submicron and deep-submicron（SRAMs） are dominated by secondary ions generated by proton nuclear reaction events. The silicon-on-insulator SRAMs characters natural radiation-hardened SEU by proton. For the deepsubmicron bulk-silicon technology SRAM, the proton SEU cross section is closely related to the proton energy and there is a threshold energy for the SEU occurrence by proton indirect ionization. CREME-MC simulation indicates that the SEU events in deep-submicron SRAM are induced by the proton nuclear reaction.