痕量氢气法监测硅中阶梯光栅湿法刻蚀截止点

Study on the etching endpoint measurement of siliconechelle grating by using trace hydrogen method

单晶硅中阶梯光栅闪耀角、非闪耀角以及顶角平台等参数对于其在光谱仪行业的应用十分重要。所以,为获得高精度中阶梯光栅槽形,对单晶硅中阶梯光栅湿法刻蚀截止点时刻进行控制显得尤为重要。基于气相色谱-原子吸收光谱法对单晶硅与KOH刻蚀液反应过程中生成的痕量氢气进行在线监测,通过获得氢质量数监测曲线拐点确定单晶硅中阶梯光栅湿法刻蚀截止点时刻。通过对反应温度和刻蚀液浓度分别从60~90℃、10%~40%范围内的调节,共进行了7组实验。根据实验结果可以得到,在氢质量数监测曲线出现拐点±5s范围内随机时刻停止刻蚀过程,所获得光栅槽形参数与理论设计光栅槽形参数进行比较,误差均〈0.5%。上述实验结果表明,通过上面所提出的刻蚀截止点控制方法能够获得参数误差〈0.5%的中阶梯光栅槽形,从而达到获得高精度光栅槽形的目的。

Monocrystalline silicon echelle grating blazed angle,non-blazed angle as well as vertex platform parameters for its application in industry of the spectrometer is very important.So it is very important to control the process of the stepped grating wet etching of single crystal silicon in order to obtain high accuracy.Based on gas chromatography-Atomic Absorption Spectrometry in the on-line monitoring of trace hydrogen silicon and KOH etching solution during the reaction generated by hydrogen mass number monitoring curve inflection point is obtained determine silicon echelle wet etching cut-off time.7groups of experiments were carried out by adjusting the temperature of the reaction temperature and the concentration of the etching solution.According to the experimental results can be obtained in the hydrogen mass number monitoring curve appear inflection point±5s range random time to stop the etching process,the grating groove parameters and theory design ofgrating groove parameters were compared,the errors were 〈0.5%.The experimental results show that the etching through the above the cut-off point control method can obtain the parameter error〈0.5% echelle groove shape,so as to achieve the purpose of obtaining high precision grating groove.