LDMOS场效应管多载波下防失效研究

Study on Anti- failure of LDMOS FET in Multi- carrier

为提高LDMOS场效应管在多载波环境下的可靠性,提出了针对多载波特性的功率放大器防失效措施:在功放内部进行峰均比处理和互调产物处理。在一台多载波激励下容易失效的功放单机里采取这种防失效方法,得到了良好的效果,提高了功放的可靠性。

To improve the reliability of LDMOS FET in nmlti-carrier environment, an anti-failure way is introduced in this paper according to the characteristic of multi-carrier： treating with the peak-to-average ratio and intermodulaion products. We put this anti-failure method in practise on a power amplifier which is easy-failure in multi-carrier environment, getting a good result and improving the amplifier＇s reliability.