高气压下温度对金刚石膜择优取向的影响

Effects of Temperature on Preferred Orientation of Diamond Films at High Gas Pressure

采用自主改进的圆柱谐振腔式MPCVD装置,以H2-CH4为气源、反应腔压强30kPa、微波功率6kW、CH4浓度2%,在不同的沉积温度下进行了多晶金刚石膜的制备研究。采用扫描电镜、X-射线衍射技术对所制备样品的表面形貌、物相及晶面取向进行了分析。结果表明,在高气压条件下,沉积温度由800℃升高至900℃时,金刚石膜的表面形貌由(111)晶面择优取向逐渐转向(100)晶面择优取向;沉积温度由900℃升高至1050℃时,金刚石的表面形貌由(100)晶面择优取向逐渐转向(111)晶面择优取向。

Polycrystalline diamond films were obtained at different temperatures in a newly developed cylindrical MPCVD reactor,using H2-CH4 as source gas.Gas pressure,input microwave power and methane concentrations were fixed at 30 kPa,6kW and 2%,respectively.Surface morphologies,phases and preferred orientation of the diamond films were characterized by scanning electron microscopy and X-ray diffraction technologies.The results show that the temperature of substrate has a significant effect on preferred orientation of diamond films at high gas pressure.As temperature increases from 800℃ to 900℃,the（111）orientation of the diamond film gradually turns to（100）preferred orientation.However,the（100）orientation changes to（111）preferred orientation when temperature increases from 900℃to 1050℃.