摘要
我们采用与现有工业生产相兼容的磁控溅射工艺,利用三靶磁控共溅射的方式制得了非晶AZTO(Al-Zn-SnO)薄膜,薄膜在波长550 nm处的透过率均在85%以上。然后,制备了以AZTO薄膜为有源层的薄膜晶体管。通过调节Al2O3沉积功率,进一步探究了Al2O3含量对AZTO薄膜晶体管性能的影响。研究发现,随着Al2O3沉积功率的增加,器件的迁移率逐渐下降,阈值电压升高,但是器件的关态电流显著降低,开关比提高。当Al2O3沉积功率为20 W时,获得了最好的转移特性曲线,其迁移率为2.43 cm2/V·s,开关比为1.9*105,阈值电压为26.6 V。
In this study, we have successfully fabricated amorphous Al-Zn-Sn-O （AZTO） films by using a three radio-frequen- cy （RF） magnetron cosputtering system which is compatible with modem display industrial production. And all AZTO thin films showed good transmittance values higher than 85% at a wavelength of 550 nm. Then, we further have fabricated AZTO thinfilm transistors. By adjusting the Al2O3 deposition power, we have discussed the effects of A2O3 content on electrical properties of AZTO thin film transistor. With increasing A1203 deposition power, the mobility and the threshold voltage increased, but the on-off current ratio increased distinctly with the off current reduced significantly. With an optimum A1203 deposition power of 20 W, the device showed a best transfer characteristic curve with field effect mobility of 2.43 cm2/V· s, on-off current ratio of 1.9＊ 10s and threshold voltage of 26.6 V.
出处
《电子设计工程》
2015年第23期183-185,189,共4页
Electronic Design Engineering
基金
国家自然科学基金资助项目(61275033)
