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基于噪声抵消技术的射频宽带低噪声放大器设计 被引量:1

Design of a RF Wideband Low Noise Amplifier with Noise Canceling Technology
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摘要 基于SMIC 0.181μm CMOS工艺,设计一款可用于1GHz^2GHz射频接收机前端的低噪声放大器。放大器利用共栅结构实现输入阻抗匹配,采用噪声抵消技术实现低噪声,核心电路尺寸为600μm×650μm。仿真结果表明,在1GHz^2GHz频率范围内,输入反射系数小于-10dB,噪声系数低于3.63dB,输入1dB压缩点在1.414GHz为-6.93dBm,在1.8V电源电压下,主体电路的功耗为18.8mW。 Implemented in SMIC 0.18 μm CMOS technique,a low noise amplifier(LNA) for 1 GHz - 2GHz RF receiver frontend is designed.The proposed LNA uses common-gate structure for input impedance matching.The noise canceling technology is used for low noise.The LNA core has an area of 600μm ×50μm.The results of simulation show that,in the bandwidth of 1GHz-2GHz,the input reflection coefficient is less than- 10 dB,the noise figure is less than 3.63 dB,and the 1dB input compression point is-6.93 dBm at the 1.414 GHz.The power consumption of LNA is 18.8mW at 1.8V supply.
出处 《遥测遥控》 2015年第6期45-50,共6页 Journal of Telemetry,Tracking and Command
关键词 低噪声放大器 共栅 噪声抵消技术 Low noise amplifier Common-gate Noise canceling technology
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参考文献6

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二级参考文献6

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