俘获和去俘获对Au/HfO_2界面导电机制的影响（英文）

Trapping and Detrapping Effects on Current Conduction Mechanisms at Interface of Au/HfO_2 High-k Films

主要研究了经不同温度退火后HfO_2高k栅介质薄膜的电流电压特性,结果表明,在栅极入射下,漏电流与Au/HfO 2界面处的陷阱密度密切相关,在高电场下,Au/HfO_2/p-Si结构的主要导电机制为Schottky发射和Poole-Frenkel发射。研究了电压应力对栅介质薄膜稳定性的影响,由于局部导电通道的形成,经时电介质击穿(TDDB)现象被观察到。

The leakage current density-voltage properties of HfO2 high-k dielectrics annealed at different temperatures and the current conduction mechanisms under gate injection were studied in details. It is found that the leakage currents are mostly associated with the high trap density at the interface of Au/I-IfD2 under gate injection, and the dominant conduction mechanisms of Au/HfO2/p-Si structure are the Schottky emission and Poole-Frenkel mechanism in the region of high electric fields. To study the reliability of the gate dielectric film, the capacitors were stressed at constant voltages under gate injection. Time dependent dielectric breakdown （TDDB） can be observed due to the formation of a percolation cluster under constant voltage stress.