InSb晶片的表面状态参数研究

Study of Surface State Parameters of InSb Chip

随着InSb红外探测器的不断发展,像元数不断增加,线宽不断减小;在采用外延工艺生长衬底时,人们对InSb晶片表面状态的要求也越来越高。主要讨论了InSb晶片的表面状态参数及其相关的测试方法,列举了一些相关标准以及国内外厂家和研究机构对表面状态参数的关注点,并找到了下一步的研发方向。该研究为生产更大规格的焦平面探测器、提高探测器性能的稳定性以及给外延生长提供优质衬底打好了基础。

With the continuous development of InSb infrared detectors,the pixel number increases and the line-width decreases continuously.When an epitaxial process is used to grow substrates,the requirement of the surface state of InSb wafers is becoming higher and higher.The surface state parameters and their related measurement methods are discussed mainly.Some related standards and the attention of the manufactures and research organizations at home and abroad to the surface state parameters are listed.The direction is found for next step research.This research has laid the basis for the production of larger format focal plane arrays,the improvement of the stability of detector performance and the provision of high-quality substrates for epitaxial growth.