摘要
The frequency response of a dual depletion p-i-n （PIN） photodiode structure is investigated. It is assumed that the light is incident on the N side and the drift region is located between the N contact and the absorption region. The numerical model takes into account the transit time and the capacitive effects and is applied to photodiodes with non-uniform illumination and linear electric field profile. With an adequate choice of the device＇s structural parameters, dual depletion photodiodes can have larger bandwidths than the conventional PIN devices.
The frequency response of a dual depletion p-i-n （PIN） photodiode structure is investigated. It is assumed that the light is incident on the N side and the drift region is located between the N contact and the absorption region. The numerical model takes into account the transit time and the capacitive effects and is applied to photodiodes with non-uniform illumination and linear electric field profile. With an adequate choice of the device＇s structural parameters, dual depletion photodiodes can have larger bandwidths than the conventional PIN devices.
