新型TiB_2/Si-Al电子封装复合材料的微观组织及其导热性能

Microstructure and Heat Conducting Property of Novel TiB_2/Si-Al Composites for Electronic Packaging

本文以原位反应喷射沉积成形制备的Ti B2/Si-Al电子封装材料为研究对象,结合Ti B2颗粒添加前后显微组织变化,分析了Si-Al材料中Si颗粒细化及二次加热保温时抑制初生Si相颗粒的长大机理。通过P.G.Klemens和Hasselman-Johnson模型计算,结合部分实验结果,分析了Ti B2颗粒和Si含量变化以及沉积坯孔隙率对复合材料热导率的影响。结果表明,Ti B2/Si-Al材料的在Si含量50%～75%、Ti B2颗粒含量在1%～9%,孔隙率在0～5%的变化范围内随着数值的导热率增大而减小,但上述三项在一定范围内的含量变化对材料整体的导热率数值影响不大。

In this paper,TiB2/ Si-Al electronic packaging materials prepared by in-situ reaction spray forming were studied. The mechanism of Si particles refining and inhibiting Si phase particles to grow up during double heating and insulation in Si-Al alloys were analyzed with the microstructure change before and after doping TiB2 particles. Calculating using P. G. Klemens and Hasselman-Johnson theoretical models and combining with some experimental data,we analyzed the influence of TiB2 particles and Si contents and porosity of deposition billet on heat conductivity. Results indicate that when Si content in 50% ～75%,Ti B2 particle in 1% ～ 9% and porosity in 0 ～ 5%,thermal conductivity of TiB2/ Si-Al decreased with increasing the value. However,the content changes of three factors within limits do not much affect the thermal conductivity of overall material.