InGaAs焦平面探测器电串音性能的研究（英文）

Electrical crosstalk in InGaAs focal plane array

串音与焦平面阵列(FPA)的灵敏度和分辨率密切相关.用模拟的方法定量地计算了In_(0.53) Ga_(0.47)As/InP探测器焦平面阵列的电串音随光波波长、入射方向和台面的刻蚀深度的变化情况.结果显示台面结构的器件的串音抑制性能比平面结构的要好.明显地发现短波长的光串音较小,正照射的串音比背照射要小,这是由材料吸收深度和异质结耗尽层宽度的影响造成的.另外,当台面的刻蚀深度穿透吸收层厚度时,其电串扰几乎完全被抑制.研究结果提出了相应的InGaAs FPA的低串音设计.

Crosstalk characteristic is closely correlated to higher sensitivity and higher resolution imaging of focal plane array（ FPA）. The electrical crosstalk of typical planar and mesa In_（0. 53）Ga_（0. 47）As /InP FPAs as a function of illumination wavelength,incidence,as well as the etching depth in the mesa structures was investigated quantitatively in detail by simulation. It was demonstrated that mesa structures possess better electrical crosstalk characteristics compared with the planar designs. Significantly,the crosstalk is lower for shorter wavelength radiation while the front-side illumination devices show better electrical crosstalk characteristics than do the back-side illuminated devices.It is ascribed to the influence of material absorption depth and the p-i junction depletion width of such structures.It was also found that the electrical crosstalk appears to be greatly suppressed when the etching depth of the mesa structure covers the entire absorption layer of the device. The results suggest design rules for InGaAs FPA with low electrical crosstalk.