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极紫外光刻物镜分组可视化界面设计优化 被引量:1

Extreme Ultraviolet Lithography Objective Design Based on Grouping and Graphical User Interface
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摘要 高数值孔径(NA)、大视场极紫外光刻物镜光学系统是实现22 nm及以下技术节点产业化光刻系统的关键部件。通过对光刻物镜系统结构的分析,利用可视化对其初始结构进行分组构造。并在此基础上采用一种渐近式NA方法获得了弦长为26 mm,宽2 mm的弧形视场内复合波像差优于均方根(RMS)为λ/50的物镜系统。借助Q型多项式,使物镜光学元件非球面度低于45μm,最大口径小于400 mm,全视场波像差优于0.027λRMS,畸变优于1.5 nm。 Extreme ultraviolet lithography(EUVL) objective with high NA and large exposure field is the core component of lithography equipments for high volume manufacture(HVM) aiming at 22 nm node and beyond.The visual generation of the initial construction of EUVL objectives is presented based on the analysis of the valid objectives and grouping strategy. With alternation of step by step increasing NA and optimizations, λ/50 root mean square(RMS) composite wavefront error has been achieved in the 2 mm wide arc full field with a chord length of26 mm. By the aids of Q-type polynomials, the maximum asphericity and diameter of mirrors have been optimized less than 45 μm and 400 mm, respectively. And finally the full-field composite wavefront error is better than 0.027λ RMS and the distortion is less than 1.5 nm.
出处 《光学学报》 EI CAS CSCD 北大核心 2015年第12期127-135,共9页 Acta Optica Sinica
基金 国家科技重大专项(2008ZX02501-008)
关键词 光学设计 极紫外光刻 可视化界面 初始结构 optical design extreme ultraviolet lithography graphical user interface initial construction
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参考文献21

  • 1A A Schafgans, D J Brown, I V Fomenkov, et al.. Performance optimization of MOPA pre-pulse LPP light source[C]. SPIE, 2015, 9422: 9422013.
  • 2M F Bal, F Bociort, J J M Braat. Analysis, search, and classification for reflective ring-Field projection systems[J]. Appl Opt, 2003, 42 (13): 2301-2311.
  • 3M Strojnik, R Flores-Hernandez, B F Andresen. AZTECA, a y-y diagram oriented interactive computer program for optical system design and optimization[C]. SPIE,1995, 2553: 400-415.
  • 4C Wang, D L Shealy. Differential equation design of finite-conjugate reflective systems[J]. Appl Opt, 1993, 32(7): 1179-88.
  • 5O Marinescu, F Bociort. Network search method in the design of extreme ultraviolet lithographic objectives[J]. Appl Opt, 2007, 46(35): 8385-8393.
  • 6刘菲,李艳秋.大数值孔径产业化极紫外投影光刻物镜设计[J].光学学报,2011,31(2):224-230. 被引量:21
  • 7曹振,李艳秋,刘菲.16~22nm极紫外光刻物镜工程化设计[J].光学学报,2013,33(9):249-256. 被引量:14
  • 8L Fei, L Yanqiu. Grouping design of eight-mirror projection objective for high-numerical aperture EUV lithography[J]. Appl Opt, 2013, 52(29): 7137-44.
  • 9胡中华,杨宝喜,朱菁,肖艳芬,曾爱军,黄惠杰.用于投影光刻机光瞳整形的衍射光学元件设计[J].中国激光,2013,40(6):308-312. 被引量:18
  • 10符媛英,李艳秋,刘晓林,曹振,刘克.投影光刻物镜波像差的公差分析方法[J].光学技术,2014,40(4):289-294. 被引量:3

二级参考文献67

  • 1李艳秋.50nm分辨力极端紫外光刻物镜光学性能研究[J].光学学报,2004,24(7):865-868. 被引量:15
  • 2郭立萍,黄惠杰,王向朝.光学光刻中的离轴照明技术[J].激光杂志,2005,26(1):23-25. 被引量:21
  • 3芮小健,张幼桢.压电陶瓷微位移器的实验研究[J].航空学报,1995,16(3):299-303. 被引量:17
  • 4张以谟.应用光学(第二版)[M].北京:机械工业出版社,1998..
  • 5马斌 李林 常军等.高分辨率折射式投影光刻物镜的研究.光学学报,2009,29(2):211-215.
  • 6Mann, H. U. R, W. Ulrich. Reflective high-NA projection lenses [C]. SPIE, 2005, 5962:332-339.
  • 7T. Peschel, H. Banse, C. Damm. Mounting an EUV schwarzschild microscope lens[C]. SPIE, 2005, 5962:430-437.
  • 8H. Meiling, N. Buzing, K. Cummings. EUVL system: moving towards production [C]. SPIE, 2009, 7271:727102.
  • 9Udo Dinger. Microlithography projection objective and projection exposure apparatus[P]. U.S. Patent US20060198029. 2006 9.
  • 10Josephus J. M. Braat. Mirror projection system for a scanning lithographic projection apparatus, and lithographic apparatus comprising such a system [P]. U.S. Patent US, 6199991. 2001- 03-13.

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