摘要
InGaAs/InP avalanche photodiodes （APD） are rarely used in a free-running regime for near-infrared single photon detection. In order to overcome the detrimental afterpulsing, we demonstrate a passive quenching active reset integrated circuit. Taking advantage of the inherent fast passive quenching process and active reset to reduce reset time, the integrated circuit is useful for reducing afterpulses and is also area-efficient. We investigate the free-running single photon detector＇s afterpulsing effect, de-trapping time, dark count rate, and photon detection efficiency, and also compare with gated regime operation. After correction for deadtime and afterpulse, we find that the passive quenching active reset free-running single photon detector＇s performance is consistent with gated operation.
InGaAs/InP avalanche photodiodes （APD） are rarely used in a free-running regime for near-infrared single photon detection. In order to overcome the detrimental afterpulsing, we demonstrate a passive quenching active reset integrated circuit. Taking advantage of the inherent fast passive quenching process and active reset to reduce reset time, the integrated circuit is useful for reducing afterpulses and is also area-efficient. We investigate the free-running single photon detector＇s afterpulsing effect, de-trapping time, dark count rate, and photon detection efficiency, and also compare with gated regime operation. After correction for deadtime and afterpulse, we find that the passive quenching active reset free-running single photon detector＇s performance is consistent with gated operation.
基金
supported by the National High Technology Research and Development Program of China(Grant No.2013AA122902)
the National Key Scientific Instrument and Equipment Development Project of China(Grant No.2013YQ030595)
the National Natural Science Foundation of China(Grant Nos.61274024 and 61474123)
