摘要
We report an enhancement cavity for femtosecond Ti：sapphire laser at the repetition rate of 170 MHz. An enhancement factor of 24 is obtained when the injecting pulses have an average power of 1 W and a pulse duration of 80 fs. By placing a BBO crystal at the focus of the cavity, we obtain a 392-mW intracavity doubled-frequency laser, corresponding to a conversion efficiency of 43%. The output power has a long-term stability with a root mean square （RMS） of 0.036%.
We report an enhancement cavity for femtosecond Ti：sapphire laser at the repetition rate of 170 MHz. An enhancement factor of 24 is obtained when the injecting pulses have an average power of 1 W and a pulse duration of 80 fs. By placing a BBO crystal at the focus of the cavity, we obtain a 392-mW intracavity doubled-frequency laser, corresponding to a conversion efficiency of 43%. The output power has a long-term stability with a root mean square （RMS） of 0.036%.
基金
supported by the National Basic Research Program of China(Grant Nos.2013CB922401 and 2012CB821304)
the National Natural Science Foundation of China(Grant No.61378040)
