皮秒激光辐照下半导体表面结构变化的研究

Study on the Surface Structure of the Semiconductor During Picosecond Laser Irradiation

研究了皮钞激光辐照下 ,半导体吸收和反射特性与材料性质、激光能量密度及激光产生电子 空穴等离子体的关系。实验测量了硅材料与掺杂硅材料表面反射率与Nd∶YAG锁模激光器能量密度的关系曲线 。

An investigation is made of the dependences of the characteristics of the absorption and ieflectivity for semiconductor on the properties of the target material,laser fluence densities and laser generated electron-hole plasma.The reflectivity of Si and doped-Si material surfaces as a function of the fluence densities of a mode-locked Nd∶YAG laser is measured.A analysical method of the structure change of the irradiated surface is given.