MOSFET单粒子翻转效应的二维数值模拟

Two-dimensional numerical simulation of the effect of the single event upset for MOSFET

用MEDICI二维模拟软件对MOSFET的单粒子翻转现象进行了计算 ,力图从理论上建立分析器件单粒子翻转的可靠手段 .通过输入不同粒子的线性能量传输值 ,得到了某一结构器件的翻转概率与线性能量传输值的关系曲线 .分析了不同结构参数的变化对单粒子翻转的影响 .模拟得到的结果与电荷漏斗模型相吻合 。

The SEU for MOSFET is simulated using the software of the MEDICI two dimensional device simulator. By the theory, a reliable approach is set up for analyzing the devices SEU. Probability of upset depending on LET for the specific device structure is calculated for LET of different particles. The effects of different structure parameters, such as the junction depth, the doping concentration of the epitax layer and junction, on SEU are analyzed. The results of simulation are consistent with the model for the charging funnel. It has been proved that the models presented in the paper are correct.