摘要
采用电化学腐蚀的方法制备多孔硅 .对不同实验条件下所得到的多孔硅的拉曼光谱进行了分析 ,确认了多孔硅是具有纳米晶结构特征的材料 。
The samples of porous silicon were made by electrochemical etching method, and studied by Raman spectroscopy. The spectra analysis showed that porous silicon is the material with nano crystal structure, and photoluminescence of PS can be explained by the model of quantum restriction effect.
出处
《物理实验》
北大核心
2002年第8期45-48,共4页
Physics Experimentation
