用AES测量样品表面吸附层的厚度及剥离速率

Measuremet of Absorbed Thickness and Etching Rate on Surfaces of Samples with AES

我们用Ar离子束剥离样品过程中AES峰强度的变化研究了样品表面吸附层的成分和厚度。由谱峰强度公式导出了吸附层的厚度和离子束对其剥离速率的表达式。并用这些公式计算了Al_2O_3-Al和Sn-Si样品的吸附C层,Al_2O_3层,SnO_2层和蒸积在多晶Si基底上的Sn层厚度,以及Ar离子束对这些薄层的剥离速率。发现当吸附层较厚时,具有较大的剥离速率;而当只有1～2个原子层时,同样条件下的剥离速率变得很小。

We have studied the components and the thickness of absorbed layers on surfaces of samples by observation of the changing of intensity peaks of AES under etching process of an Ar beam. We derived formulas of thickness of absorbed layer and etching rate of an ion beam from the formula of intensity peaks. Using these formulas, we calculated the absorbed thickness and the etching rate of C and A12O3 on Al sample and SnO2 and Sn which was deposited on polycrystal Si sample. It was found that there is the larger etching rate when the absorbed layer has a larger thickness, but the etching rate decreased rapidly when there is only about one or two atomic layer on the surface.