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金迁移诱致谐波混频器失效分析研究 被引量:3

Failure Analysis of Harmonically Mixer Caused by Au Electromigration
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摘要 对用于某下变频器模块中的HMC264型谐波混频器开展了失效分析研究。结果表明,混频器增益下降、电流增大是由于混频器芯片表面产生金迁移并将相邻金属化条跨接所致。混频器芯片表面产生金属迁移是因为芯片表面有液体聚集现象存在,加电使用过程中,金属化层材料Au在电场及残留液体共同作用下发生迁移所致。借助扫描电镜对电迁移形貌及元素成分进行了分析,并对电迁移相关的失效机理进行了讨论,最后对预防电迁移所导致的失效提出了预防和改进措施。 The failure analysis of HMC264 harmonically mixer used in the module of a lower frequency converter is carried out. The results show that the gain of the mixer is decreased and the current is increased, which is due to the cross connection between adjacent metal strip caused by Au electromigration. Due to the presence of liquid aggregation on the surface of the chip, and in the process of adding electric power, the metal of Au in the metal layer transfers in the interaction of the electric field and the residual liquid. By means of scanning electron microscopy, the morphology and composition of the elements is analyzed, and the failure mechanism is also to be discussed. Finally, the prevention and improvement measures for the prevention of Au electromigration are proposed.
出处 《环境技术》 2015年第6期43-46,共4页 Environmental Technology
关键词 金迁移 谐波混频器 失效分析 电子风力 Au electromigration harmonically mixer failure analysis electron wind force
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  • 1李志宏,武国英,陈文茹,郝一龙.VLSI多层互连可靠性 第二部分:应力感应失效[J].微电子技术,1994,22(3):1-16. 被引量:1
  • 2[1]CHRISTOU A.Electromigration and electronic device degradation[M].Canada: John Wiley & Sons, Inc.,1994.
  • 3[2]OREN E E. Computer simulation laboratory[EB/OL].http://www.c sl.mete.metu.edu.tr/Electromigration.
  • 4[3]BLECH I A, MEIERAN E S. Electromigration in thin aluminum films[J]. J Appl Phys, 1968,40(2): 485-491.
  • 5[4]PIERCE D G, BRUSIUS P G. Electromigration: A review [J]. Microelectronics Reliab, 1997,37(7): 1053-1072.
  • 6[5]BLACK J R. Physics of Electromigraion[A]. Proc of the IEEE Int Reliability Physics Symp[C]. 1983,142-149.
  • 7[6]WU K, BRADLEY R M. Theory of electromigration failure in polycrystalline metal films[J]. Phys Rev B,1994,50(17): 12468-12487.
  • 8[7]GONZALEZ J L, RUBIO A.Shape effect on electromigration in VLSI interconnects[J]. Microelectronics Reliab,1997,37: 1073-1078.
  • 9[9]De MUNARI I, SCORZONI A, TAMARR F,et al.Drawbacks to using NIST electromigration test-structure to test bamboo metal Lines[J].IEEE Trans Elect Dev, 1994,41(12): 2276-2280.
  • 10[10]WU K B,JUPITER P. Effects of Al microstructure on electromigration using a new reactive ion etching and scanning electron microscopy technique[J]. Appl Phys Lett ,1991,58 (12): 1299-1301.

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