摘要
MEMS压力传感器的研制已相当成熟,但在高温领域却遇到了许多问题,为解决高温环境下压力测量的问题,文中介绍了一种新型Si C高温压力传感器电容芯片的设计方案。应用Ansys有限元分析软件进行热-结构耦合场仿真分析,常温下电容芯片的灵敏度为1.3 p F/bar(1 bar=100 k Pa),300℃、500℃、700℃时灵敏度分别为1.4 p F/bar、1.54 p F/bar、1.74 p F/bar,表明这种结构在高温下仍具有较高的灵敏度,同时对结构进行模态仿真,由模态分析结果知,一阶频率为245 930 Hz,可知该结构具有很高的频响。
The development of MEMS pressure sensor is mature, but encounters many problems in high temperature.In order to solve the pressure measurement problems under the environment of high temperature, a new type design of SiC high temperature pressure sensor capacitance chip was introduced The Ansys finite element analysis software was utilized to analyze the thermal- structural coupled-field.The sensitivity of the capacitance chip at room temperature was 1.3 pF/bar, an the sensitivity of the capacitance chip at the temperature of 300℃,500℃ and 700℃ was respectively 1.4 pF/bar, 1.54 pF/bar and 1.74 pF/bar, proving that the structure had relatively high sensitivity under high temperature.While the modal simulation shows the primary frequency is 245 930 Hz, demonstrating a high frequency response of the structure.
出处
《仪表技术与传感器》
CSCD
北大核心
2015年第3期7-9,42,共4页
Instrument Technique and Sensor
关键词
SIC
高温压力传感器
电容芯片
Ansys有限元分析软件
灵敏度
频响
SiC
high temperature pressure sensor
capacitance ehip
Ansys finite element analysis
sensitivity
frequency response
