GaN高频开关电力电子学的新进展

New Progress in GaN High Frequency Switch Power Electronics

宽禁带半导体的发展给电力电子领域带来新一代功率开关器件,随着Si C功率器件的发展,Ga N功率高电子迁移率晶体管(HEMT)在微波毫米波领域发展成熟的同时,又在电力电子的高频开关方面进入应用创新的发展阶段。综述了近几年Ga N功率HEMT在高频开关方面的最新进展:高频高效率开关应用;高功率密度;栅极驱动电路设计;大功率集成;热设计和可靠性研究等。重点介绍了基于Ga N功率HEMT在高频开关中应用的特点,在电路拓扑结构设计、寄生参量的抑制、栅极驱动电路设计、功率集成、散热设计与工艺和失效机理等创新。Ga N高频开关电力电子学在应用创新方面已取得重要进展。

The developments in wide bandgap semiconductor bring a new generation of power switch devices to the electric power electronics. Since the development of Si C power devices,the development in Ga N power high electron mobility transistor（ HEMT） matured in the field of microwave millimeter wave and has been into the innovation stage of application in high frequency switch of power electronics at the same time. The latest progress in Ga N power HEMT is reviewed in recent years,such as the switching applications in high frequency with high efficiency,high power density,the design on gate drive circuit,high power integration,thermal design and reliability research and so on. The technology innovations in the circuit topology structure design,inhibition of parasitic parameters,gate drive circuit design,integration and heat dissipation design and process and the failure mechanism and so on,in the light of the features of the application of Ga N power HEMT in high frequency switch are mainly introduced. The important progress in Ga N high frequency switch power electronics has been made in application innovation.