摘要
为保护绝缘栅双极晶体管(IGBT)测试电路及芯片失效信息,提出了一种新型的无损IGBT短路安全工作区测试电路,可以在器件测试时根据测试电流、电压波形特征,自动识别IGBT是否发生失效。一旦被测器件在测试过程中发生失效,测试电路能够立即自动将电流旁路,保护芯片表面不受二次大电流破坏,进而保护芯片失效信息,为芯片的失效分析提供依据。根据设计搭建了测试保护电路,并进行实验比较。通过分析对比失效IGBT模块及芯片内部结构,发现该新型测试电路能在IGBT失效后,保护被测IGBT芯片不被进一步破坏,为失效分析提供充分依据。
In order to protect the insulated gate bipolar transistor（ IGBT） test circuit and chip failure information,a novel non-destructive short-circuit safe operation area testing circuit was proposed. It distinguished whether the device under test（ DUT） was failed or not by detecting its voltage and current characteristics. Once the DUT was failed,it automatically and immediately bypassed the current,thereby the chip surface was protected far away from the second high current damage and the failure information was saved,which provided clues for the failure analysis. Based on the design,the non-destructive test circuit was built and experiment results were compared. By comparsion and analysis of the internal structure of the failed chip and module,it shows that the proposed circuit successfully protects the failed IGBT chips from being further destroyed by the short-circuit current, and provides the basis for the failure analysis.
出处
《半导体技术》
CAS
CSCD
北大核心
2016年第1期70-75,共6页
Semiconductor Technology
关键词
绝缘栅双极晶体管(IGBT)
短路测试
失效分析
短路安全工作区
无损测试
insulated gate bipolar transistor（IGBT）
short-circuit test
failure analysis
shortcircuit safe operation area（SCSOA）
non-destructive test
