期刊文献+

基于PD的半导体激光器温度控制系统设计方法 被引量:7

Design method of a PD-based temperature control system for laser diode
下载PDF
导出
摘要 半导体激光器常用于抽运与检测激光光源用于原子物理实验与量子科学仪器的研究,而半导体激光器的各特性参数,如阈值电流、峰值波长、输出功率、使用寿命等,均与温度相关,因此对其进行温度控制很重要.根据激光器输出功率与温度之间的关系,提出一种基于光电二极管(PD)的激光器温度控制系统,通过激光管内部集成的PD所获得的激光器光功率,进而得出激光器发光芯片温度,与热敏电阻相结合,以半导体制冷芯片为执行器,构成双闭环控制系统,可实现高精度长期稳定激光器温度控制,稳定度优于±5 m K,能够满足原子物理实验与研究对半导体激光器的要求. Semiconductor lasers are widely used as pump and probe laser light source in atomic physics and quantum science equipment researches. The characteristics of the laser diodes,such as threshold current,wavelength,output power,lifetime,are temperature dependent,therefore it is vitally important to control the temperature of semiconductor lasers. Based on the relation between laser temperature and the output power,a photodiode( PD) based laser temperature control system was proposed. The light power of lasers can be acquired by the monitor photodiode in the laser package and then the laser junction temperature can be obtained by the relation between the power and the temperature. A double close loop control system was designed using the photodiode integrated with the temperature sensor and the thermoelectric coolers as the actuator. The test result indicates that the long-term stability of the photodiode-baserd laser diode temperature control system can realize better than ± 5 mK and meet the requirement of semiconductor lasers for the experiment and study of atomic physics.
作者 陈熙 全伟
出处 《北京航空航天大学学报》 EI CAS CSCD 北大核心 2015年第12期2391-2396,共6页 Journal of Beijing University of Aeronautics and Astronautics
基金 国家自然科学基金(61374210 61227902) 中央高校基本科研业务费专项资金(30371001)
关键词 半导体激光器 原子物理 温度控制 光电二极管(PD) 长期稳定性 semiconductor laser atomic physics temperature control photodiode(PD) long-term stability
  • 相关文献

参考文献15

  • 1Wieman C E,Hollberg L.Using diode lasers for atomic physics[J].Review of Scientific Instruments,1991,62(1):1-20.
  • 2Allred J C,Lyman R N,Kornack T W,et al.High-sensitivity atomic magnetometer unaffected by spin-exchange relaxation[J].Physical Review Letters,2002,89(13):130801.
  • 3Mitani S M,Alias M S,Yahya M R,et al.Temperature effect on gain and threshold current of GaInNAs-based 1.3μm semiconductor laser[C]//Proceedings of IEEE International Symposium on Industrial Electronics,ISIE.Piscataway,NJ:IEEE Press,2009:2208-2211.
  • 4Schetzen M.Analysis of the single-mode laser-diode linear model[J].Optics Communications,2009,282(14):2901-2905.
  • 5Park G,Huffaker D L,Zou Z,et al.Temperature dependence of lasing characteristics for long-wavelength (1.3-μm) GaAs-based quantum-dot lasers[J].IEEE Photonics Technology Letters,1999,11(3):301-303.
  • 6徐秀芳,胡晓东.半导体激光器的功率稳恒控制技术[J].光子学报,2001,30(6):761-764. 被引量:23
  • 7Sun H.Laser diode beam basics,manipulations and characterizations[M].Berlin:Springer,2012:13-14.
  • 8陈晨,党敬民,黄渐强,王一丁.高稳定、强鲁棒性DFB激光器温度控制系统[J].吉林大学学报(工学版),2013,43(4):1004-1010. 被引量:28
  • 9李栋,李曼,耿宏伟.高性能半导体激光器温度控制单元的设计[J].航空精密制造技术,2012,48(4):45-47. 被引量:4
  • 10汪灵,叶会英,赵闻.半导体激光器温度控制系统设计与算法仿真[J].仪表技术与传感器,2013(5):95-98. 被引量:15

二级参考文献31

共引文献92

同被引文献51

引证文献7

二级引证文献23

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部