Phase-selective fluorescence of doped Ge_2Sb_2Te_5 phase-change memory thin films 被引量：1

Phase-selective fluorescence of doped Ge_2Sb_2Te_5 phase-change memory thin films

导出

摘要 In this Letter, new concepts of fluorescence phase-change materials and fluorescence phase-change multilevel recording are proposed. High-contrast fluorescence between the amorphous and crystalline states is achieved in nickel- or bismuth-doped Ge;Sb;Te;phase-change memory thin films. Opposite phase-selective fluorescence effects are observed when different doping ions are used. The fluorescence intensity is sensitive to the crystallization degree of the films. This characteristic can be applied in reconfigurable multi-state memory and other logic devices. It also has likely applications in display and data visualization. In this Letter, new concepts of fluorescence phase-change materials and fluorescence phase-change multilevel recording are proposed. High-contrast fluorescence between the amorphous and crystalline states is achieved in nickel- or bismuth-doped Ge_2Sb_2Te_5 phase-change memory thin films. Opposite phase-selective fluorescence effects are observed when different doping ions are used. The fluorescence intensity is sensitive to the crystallization degree of the films. This characteristic can be applied in reconfigurable multi-state memory and other logic devices. It also has likely applications in display and data visualization.

作者张科林金成王阳

机构地区 Key Laboratory of High Power Laser Materials Department of Chemical Physics

出处《Chinese Optics Letters》 SCIE EI CAS CSCD 2015年第12期50-53,共4页 中国光学快报（英文版）

基金 partially supported by the National Natural Science Foundation of China(Nos.61178059,51472258,and 61137002) the National Basic Research Program of China(No.2013CBA01900)

关键词 Amorphous films Crystalline materials Data visualization FLUORESCENCE GERMANIUM Logic devices Phase change materials Semiconductor doping Thin films Amorphous films Crystalline materials Data visualization Fluorescence Germanium Logic devices Phase change materials Semiconductor doping Thin films

分类号 TB383.2 [一般工业技术—材料科学与工程]

引文网络
相关文献

参考文献31

1S. R. Ovshinsky, Phys. Rev. Lett. 21, 1450 (1968).
2M. Wuttig and N. Yamada, Nat. Mater. 6, 824 (2007).
3S. Raoux, W. Welnic, and D. Ielmini, Chem. Rev. 110, 240(2010).
4S. R. Ovshinsky, Disordered Materials: Science and Technology (Amorphous Institute Press, 1982).
5S. R. Ovshinsky, Mater. Res. Soc. Sym. Proc. 554, 399 (1998).
6E. Mytilineou, S. R. Ovshinsky, B. Pashmakov, D. Strand, and D. Jablonski, J. Non-Cryst. Solids 352, 1991 (2006).
7T. Tsujioka and M. Irie, Appl. Opt. 37, 4419 (1998).
8P. Zijlstra, J. W. M. Chon, and M. Gu, Nature 459, 410 (2009).
9P. Hosseini, C. D. Wright, and H. Bhaskaran, Nature 511, 206(2014).
10F. F. Schlich, P. Zalden, A. M. Lindenberg, and R. Spolenak, ACS Photon. 2, 178 (2015).