摘要
传统制备P型硅基太阳能电池的方法被应用到N型硅片上,成功制备出n+np+结构的N型硅基太阳能电池。在制备过程中利用补偿法形成np+背结,无需保护背面。最高效率为13.1%(Voc=0.58V,Jsc=31.2mA/cm2,FF=72.4%)。
N type silicon based solar cells of n+np+ structure have been successfully prepared using the traditional method of preparing P type silicon solar cell. In the preparation process, the np+ back junction is formed without protecting back side using compensation method. The highest efficiency of the solar cell is 13. 1%(Voc=0. 58 V,Jsc=31.2 mA/cm2 ,FF=72.4%).
出处
《光电子技术》
CAS
2015年第2期78-80,100,共4页
Optoelectronic Technology
基金
国家自然科学基金资助(61274067
61306072)
关键词
N型硅
太阳能电池
背结
丝网印刷
N type silicon
solar cell
back junction
screen printing