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Co掺杂闪锌矿ZnO的磁性和光学性质 被引量:2

Magnetic and Optical Properties of Co-doped Zinc Blende ZnO
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摘要 采用自旋极化密度泛函理论方法对Co掺杂闪锌矿Zn O的能带结构、态密度、磁学和光学属性进行了研究。计算结果显示:Co掺杂闪锌矿Zn O的基态是反铁磁态,具有金属性特征;而铁磁态具有半金属性特征。铁磁耦合在费米能级附近出现了明显的自旋劈裂现象,表现出明显的不对称性和强烈的Co 3d和O 2p杂化效应。磁矩主要来源于Co 3d轨道电子以及部分近邻耦合的O 2p轨道电子,大小与Co原子的掺杂位置有关。光学性质计算结果显示,Co掺杂闪锌矿Zn O在可见光范围内都有较强的光吸收能力,吸收峰在高能区发生了红移现象。理论计算结果表明,Co掺杂闪锌矿Zn O或许是一种优异的磁光材料。 The band structure,density of state,magnetic and optical properties of Co doped zinc blende Zn O were systematically studied by using the first-principles based on the spin polarized density functional theory. The calculated results show that the ground state of Co doped zinc blende Zn O is antiferromagnetic and shows metal characteristics,while the ferromagnetic state shows the half-metallic characteristics. For the ferromagnetic coupling state,strong spin-orbit coupling appears near the Fermi level and shows no obvious asymmetry for up and down spins,which indicates a significant hybrid effects from Co 3d and O 2p states. The magnetic moments are mainly contributed by unpaired electrons in Co 3d and neighbor O 2p orbital and are correlated to the doped site of Co atoms.In addition,the calculated results of optical properties show that Co doped zinc blende Zn O has a strong absorptive capacity at the visible light,and the absorption peaks have red shift in the high energy region. The theoretical calculated results demonstrate that Co-doped zinc blende Zn O may become excellent magneto-optic materials.
出处 《发光学报》 EI CAS CSCD 北大核心 2015年第5期508-514,共7页 Chinese Journal of Luminescence
基金 陕西省自然科学基金(2014JM2-5058) 延安市科技攻关项目(2013-KG03) 榆林市产学研赞助项目(036) 延安大学科研引导项目(YD2014-02)资助
关键词 CO掺杂 闪锌矿ZnO 第一性原理 铁磁和反铁磁 光学性质 Co-doped zinc blende ZnO first-principles ferromagnetic and anti-ferromagnetic optical properties
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  • 1李金华,张吉英,赵东旭,张振中,吕有明,申德振,范希武.Fe掺杂ZnO纳米薄膜的光致发光(英文)[J].发光学报,2006,27(6):976-980. 被引量:7
  • 2沈益斌,周勋,徐明,丁迎春,段满益,令狐荣锋,祝文军.过渡金属掺杂ZnO的电子结构和光学性质[J].物理学报,2007,56(6):3440-3445. 被引量:56
  • 3Wolf S A, Awschalom D D, Buhrman R A, et al. Spintronics: A spin-based electronics vision for the future [ J ]. Science, 2001, 294(5546) :1488-1495.
  • 4Dietl T, Ohno H, Matsukura F, et al. Zener model description of ferromagnetism in zinc-blende magnetic semiconductors [J]. Science, 2000, 287(5455):1019-1022.
  • 5Dietl T, Ohno H, Matsukura F. Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors [ J ]. Phys. Rev. B, 2001, 63(19) :195205-1-21.
  • 6Sato K, Katayama-Yoshida H. Material design for transparent ferromagnets with ZnO-based magnetic semiconductors [ J] Jpn. J. Appl. Phys., 2000, 39(6B):L555-L558.
  • 7Ueda K, Tabata H, Kawai T. Magnetic and electric properties of transition-metal-doped ZnO films [ J ]. Appl. Phys. Left. , 2001, 79(7) :988-990.
  • 8Vanderbilt D. Soft self-consistent pseudopotentials in a generalized eigenvalue formalism [ J]. Phys. Rev. B, 1990, 41 ( 11 ) :7892-7895.
  • 9Perdew J, Burke K, Ernzerhof M. Generalized gradient approximation made simple [ J ]. Phys. Rev. Lett. , 1996, 77 (18) :3865-3868.
  • 10Monkhorst H J, Pack J D. Special points for Brillouin-zone integrations [J]. Phys. Rev. B, 1976, 13(12) :5188-5192.

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  • 1王颖,湛永钟,许艳飞,喻正文.稀磁半导体材料的研究进展及应用前景[J].材料导报,2007,21(7):20-23. 被引量:13
  • 2段满益,徐明,周海平,沈益斌,陈青云,丁迎春,祝文军.过渡金属与氮共掺杂ZnO电子结构和光学性质的第一性原理研究[J].物理学报,2007,56(9):5359-5365. 被引量:59
  • 3BEDNARSKI H, CISOWSKI J, PORTAL J C. Pressure dependence ofmagnetization in diluted magnetic semiconductors [J]. J Magn MagnMater, 2003, 261(12): 172-174.
  • 4BROWN G F, WU J Q. Third generation photovoltaics [J]. LaserPhotonics Rev, 2009, 36(3): 394-405.
  • 5D正TL T, OHNO H, MATSUKURA F. Hole-mediated ferromagnetism intetrahedrally coordinated semiconductors [J]. Phy Rev B, 2001, 63(5):195205.
  • 6KATAYAMA-YOSHIDA H, KATO R, YAMAMOTO T. First principlesstudy of Mn doped GaN [J]. Cryst Growth, 2001: 32(6): 231428.
  • 7SATO K,KATAYAMA-YOSHIDA H. Study on the electronic structureand magnetic properties of Mn doped GaN [J]. Sci Technol, 2002, 28(11):17367.
  • 8SASAKI T, SONADA S, YMAMOTO Y. Magnetic and transportcharacteristics on high Curietemperature ferromagnet of Mn-doped GaN[J]. Appl Phys Lett, 2002, 91(1): 7911.
  • 9WILSON R G, SCHWARTZ R N, ABERNATHY C R. 1.54nmphotoluminescence from Er-implanted GaN and AIN [J]. Appl Phys Lett,1994,65(8): 992.
  • 10STECKL A J, BIRKHAHN R. Visible emission from Er-doped GaNgrown by solid source molecular beam epitaxy [J]. Appl Phys Lett,1998,73(12): 1700.

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