楔形瓣状结构对正向注入型Si-LED发光特性的影响

Effect of Wedged Petaloid Configuration on Luminescence Characteristics of Si-LED Fabricated in Standard CMOS Process

基于标准CMOS工艺的p+源/漏区和n阱,设计了两种楔形瓣状结构的正向注入型硅基发光二极管(Si-LED),采用UMC 0.18μm 1P6M CMOS工艺设计制备。测试结果表明,正向注入型p+/n-well二极管的发射波长位于近红外波段,峰值波长在1 130 nm附近,且工作电压小于2 V,与标准CMOS电路兼容。其中,八瓣结构的Si-LED(TS2)在200 m A时的发光功率可达1 200 n W,且未出现饱和,而注入电流为40 m A时的最大功率转换效率达5.8×10-6,约为四瓣结构器件(TS1)的2倍。所研制的Si-LED具有工作电压低、转换效率高等优点,有望在光互连领域得到应用。

Based on p＋source / drain region and n-well of standard CMOS technology,two forwardinjection-type Si-LEDs with different petaloid configuration were designed and fabricated by UMC0. 18 μm 1P6 M CMOS process. The measurement results indicate that the emission spectra of both Si-LEDs locate at near-IR region with peak wavelength around 1 130 nm,and the devices can operate properly below 2 V. When the device TS2 with eight-petal configuration is forward-biased at 200 m A,its optical power increases to 1 200 n W without saturation,and the maximum power conversion efficiency reaches up to 5. 8 × 10- 6at the current of 40 m A,which is almost double that of the device TS1 with four-petal. Due to the features of low operating voltage and high conversion efficiency,the device TS2 is highly attractive for future optoelectronic applications.