期刊文献+

功率放大器中功率晶体管的研究现状

A Review of the Power Transistors for Power Amplifiers
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摘要 功率放大器(Power Amplifier,PA)的核心器件是各种功率晶体管,它直接决定了PA的基本指标,也决定了整个无线通信系统的电路指标与设计成本。基于对半导体材料的分析,本文总结了功率器件的特点,并采用文献调研的方式对其发展现状及未来趋势进行了研究,为未来功率晶体管研究和PA设计奠定了研究基础。 As core devices in the power amplifies(PAs), the power transistors directly determine the basic metrics of PAs, which determine the performances and the costs of the wireless communication systems. Based on the analysis of the semiconductor materials, this paper summarizes the characteristics of the power transistors and investigates theirs development situations and future trends using the literature reviews, which provides the experience and the guidance for the researches of the power transistors and PAs in the future.
出处 《信息技术与信息化》 2015年第9期115-117,共3页 Information Technology and Informatization
关键词 半导体 功率器件 PA Semiconductor Power Transistors PA
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参考文献5

  • 1R.J.Trew,Wide bandgap semiconductor transistors for microwave power amplifiers,IEEE Microwave Magazine,2000,1(1):46-54.
  • 2S.C.Cripps,et al.Power amplifiers and transmitters for RF and Microwave,IEEE Transactions on Microwave Theory and Techniques,2002,50(3):822-824.
  • 3S.Lin,A.E.Fathy,A 20 W Ga N HEMT VHF/UHF class-D power amplifier,IEEE Conf.on Wireless and Microwave Tech.,2011:1~4.
  • 4M.N.Yoder,Wide bandgap semiconductor materials and devices,IEEE Trans.Electron Devices,1996,43(10):1633~1636.
  • 5W.Shockley,Circuit element utilizing semiconductive material,US Patent 2569347,1951-06-26.

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