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小电流晶闸管电磁脉冲触发导通特性研究

Research on the dV/dt Triggering Breakover Characteristics of Small Current Thyristor
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摘要 为了研究小电流晶闸管dV/dt触发导通的特性,选取A型引信起爆电路采用的2N5061型小电流晶闸管作为研究对象,对小电流晶闸管dV/dt触发导通机理进行分析,开展了小电流晶闸管电磁脉冲注入试验.研究结果表明:dV/dt触发的导通时间仅与晶闸管本身结构材料特性以及阳极电压峰值有关;dV/dt触发条件下,当阳极电压峰值一定时,晶闸管导通时间也是一定的;如果注入脉宽低于晶闸管在该电压下dV/dt触发时的导通时间,晶闸管将无法导通;晶闸管dV/dt触发导通时需要的阳极电压比较小,远低于其阴阳极间的断态重复峰值电压. In order to get the dV/dt triggering breakover characteristics of small current thyristor, 2N5061 thyristor which is used in Model A fuze detonating circuit is taken as the research object. By the analysis of dV/dt trigger's mechanism and EMP injection test, the results show that= the breakover time of SCR triggered by dV/dt is only related to the structure and material properties of itself as well as the anode voltage; the breakover time of the same type of thyristor is a fixed value under the same anode voltage; if the injection pulse width is shorter than the breakover time, the conduction of thyristor cannot be realized; the anode voltage when thyristor conduction is dV/dtt triggered is much samller than the thyristor's repetitive peak off-state voltage.
出处 《军械工程学院学报》 2015年第6期28-34,共7页 Journal of Ordnance Engineering College
基金 国防科技重点实验室基金(9140C87010213JB34005) 装备预研共用技术基金(9140A33010314JB34467)
关键词 小电流晶闸管 dV/dt触发 导通特性 电磁脉冲注入 导通时间 阳极电压 small current thyristor dV/dt trigger breakover characteristic EMP injection breakover time anode voltage
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  • 1孟志鹏,张自成,杨汉武,钱宝良.Applications of Semiconductor Switches in Pulsed Power Technology[J].Chinese Physics C,2008,32(z1):277-279. 被引量:19
  • 2王毅,石新春,李和明,朱凌,杜海江.基于统一离散时域建模法的晶闸管串联运行暂态仿真[J].电力系统自动化,2004,28(18):41-44. 被引量:21
  • 3周怀安,杜正伟,龚克.双极型晶体管在强电磁脉冲作用下的瞬态响应[J].强激光与粒子束,2005,17(12):1861-1864. 被引量:28
  • 4维捷斯拉夫·本达,约翰·戈沃,邓肯A·格兰特,等.功率半导体器件-理论及应用[M].吴郁,张万荣,刘兴明,等译.北京:化学工业出版社,2005,5:145-146.
  • 5Wunsch D C, Bell R R 1968 IEEE Transactions on Nuclear Science 15 244.
  • 6Dobykin V D,Kharchenko V V 2006 Journal of Communications Technology and Electronics 51 231.
  • 7Dobykin V D 2008 Journal of Communications Technology and Electronics 53 100.
  • 8王源 贾嵩 孙磊 张钢刚 张兴 吉利久.物理学报,2007,56:7243-7243.
  • 9Chai C C, Yang Y T,Zhang B, Leng P, Yang Y, Rao W 2009 Semiconductor Science and Technology 24 035003.
  • 10Xi X W, Chai C C, Ren X R, Yang Y T, Zhang B 2009 Proceedings of the 16th IEEE International Symposium on the Physical and Failure Analysis of integrated Circuits, Suzhou, China,July 6--10,2009 p443.

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