摘要
针对基于ARM的大容量NAND FLASH应用中的问题进行研究,发现ARM的可变静态存储控制器模块只有2个NAND FLAS H片选引脚,无法直接提供大容量NAND FLAS H所需的4个片选信号;NAND FLAS H存储以页为单位,对于不足1页的数据无法进行存储。通过对ARM的引脚复用功能和NAND FLAS H的工作特点进行研究,提出了自定义NAND FLAS H片选信号解决片选不足,通过对数据进行填充解决不足1页的数据无法存储的问题。最终通过实验进行验证,保证了基于ARM的大容量NAND FLASH可以充分有效的应用。
The questions existing in application of the large capacity NANDFLASH based on ARM are researched,because flexible static memory controller（FSMC）module of ARM only has two pins for chip selection but can not provide four chip selection signals required by large capacity NAND FLASH,and the storage of FLASH NAND is based on the unit of page,which can not store the data of the insufficient page. By research on the multiplexing functions of ARM pin and working characteristics of NAND FLASH,the self-definition of NAND FLASH chip selection signal is proposed to solve the problem of pin insufficiency and the filling in data is adopted to settle the problem that the data insufficient as one page can not be stored. The method verified in experiments. It ensured the application of large capacity NAND FLASH based on ARM effectively.
出处
《现代电子技术》
北大核心
2016年第2期65-68,共4页
Modern Electronics Technique
