壳层厚度对于量子点/聚合物复合电子存储器件性能的影响

Influence of shell thickness on properties of quantum dot/polymer hybrid electronic storage device

研究了一种含有不同壳层结构量子点的聚乙烯咔唑(PVK)/Cd Se量子点复合体系电双稳器件,结果发现基于无壳层量子点的器件电荷存储能力较差,随着壳层厚度的增加,器件的电学特性由双稳态向三稳态转变。通过电容-电压(C-V)的测试结果表明,壳层的厚度对于量子点的电荷捕获能力有重要的影响,从而导致器件表现出不同的存储特性。

A hybrid electronic bistable device based on PVK/Cd Se quantum dot which contains various shell structure is reported. It is found that the charge storage capacity of the device based on the non-shell quantum dot is poor,and the electrical properties of the device is converted from bistable state to tristable state with the increasing of shell thickness. The test results of capacitance-voltage（C-V）show that the shell thickness has significant influence on the charge capture capability of the quantum dot,which causes that the device possesses different storage characteristics.