RF-LDMOS器件宏模型研究

The Research of Macro Model for RF-LDMOS Device

射频器件模型是射频电路仿真的基本要素之一。为了解决射频横向双扩散金属氧化物半导体晶体管(RF-LDMOS)缺乏准确SPICE模型的问题。此处提出了一种适用于带封装结构的RF-LDMOS器件宏模型建模及提模方法,并采用MBP软件进行验证分析。结果表明该宏模型建模方法能够很好的实现数据拟合,直流特性和射频特性的误差均在5%范围内,能够准确地反映器件的电学特性。

Radio frequency（RF）device model is one of the basic elements of the RF circuit simulation. To solve RFlateral double diffused metal oxide semiconductor transistor（RF-LDMOS）is lack of accurate SPICE model. A macromodel and parameter-extraction method for packaged RF-LDMOS devices is introduced. The MBP tools are used forthe verification and analysis,the results show that the macro model can achieve data fitting well,the model error ofdirectcurrent（DC）characteristics and RF characteristics can be in the range of 5% and the model can accurately re-flect the electrical characteristics of the device.