高性能InP/InGaAs宽光谱红外探测器

High Performance InP/InGaAs Wide Spectrum Infrared Detectors

In P/In0.53Ga0.47As短波红外探测器是一种高性能的近室温工作器件,从200 K到室温下都能获得较好的器件性能,从而大大降低了对制冷的要求。为了充分利用目标在可见光和短波波段的光谱信息,通过特殊的材料结构设计和器件背减工艺,成功实现了320×256In P/In Ga As宽光谱红外探测器,能够同时对可见光和短波红外响应,并从77 K到263 K工作温度下实现了对人脸、计算机及室外2.3 km处的景物成像。测试样管平均峰值探测率为2×1012 cm Hz1/2/W,光谱响应为0.6~1.7μm,光谱响应测试和成像结果同时验证了In P/In Ga As宽光谱探测器对可见光信号的探测。相比标准的In P/In0.53Ga0.47As短波探测器,In P/In Ga As宽光谱探测器显示了可见/短波双波段探测的效果,大大丰富了探测目标的信息量,可显著提升对目标的识别率。

InP/In0.53Ga0.47As short wavelength detectors can work under or near room temperature with high performance, so requirement for cooling was largely decreased, then reduced size and cost and so on. In order to fully utilize the energy of visible light and short wavelength reflected from targets, the InP/In0.53Ga0.47AS short wavelength detectors was adopted to extend response wavelength from short wavelength to visible light range. Special materials design and substrate thinning was combined to remove InP substrate, then 320 ~ 256 InGaAs wide spectrum detectors were prepared. Building positioned at 2.3 km away, face and computer were imaged by the 320 X 256 InGaAs wide spectrum detector by using F#= 1.3 optical lens from 77 K to 263 K. The imaging results showed both visible light and short wavelength information of targets were detected and collected. Further measurement results disclosed average peak detectivity 2 × 1012 cmnz1/2/W under 300 K temperature with spectrum response 0.6-1.7 um for the wide spectrum detector. It can be concluded that target information from both visible and short wavelength dual bands other than short wavelength band were gained by the wide spectrum detector, and it behaved as visible/short wavelength dual band detecting. Recognition rate of targets could be expected to improve with the InP/InGaAs wide spectrum detectors.